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美国AST椭偏仪信息二维码

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价格 电议对比
发货 广东东莞市预售,付款后7天内
品牌 AngstromSun
过期 长期有效
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更新 2024-07-13 12:14
 
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基本参数

品牌:

AngstromSun

所在地:

广东 东莞市

起订:

≥1 PCS

供货总量:

未填

有效期至:

长期有效
详细说明

美国赛伦科技为AST在中国地区的授权总销售服务商,赛伦科技在上海,北京分别设有办事处。

美国AST(AngstromSunTechnologiesInc)是世界主要针对科研单位提供:spectroscopicellipsometer(SE),spectroscopicreflectometer(SR)andMicrospectrophotometer(MSP)的知名供应商。客户遍布全球主要科研大学及主要半导体厂商:


NIST

ISMI

NASA

JPL

MarshallSpaceCenter

AirForce

MIT

ColumbiaUniversity

UCBerkeley

GeorgiaTech

UniversityofVirginia

USTC,China

...

BellLaboratories

HP

GE

LockheedMartin

Corning

AppliedMaterials

FirstSolar

DowChemical

Samsung

TexasInstruments

NationalSemiconductor

...
 
美国赛伦科技上海办事处
吴惟雨/CavenWu Cell: 
QQ: 
上海市黄浦区陆家浜路1378号万事利大厦

产品总述: Functions Spectroscopic
Reflectometer(SR)Microspectrophotometer(MSP) Spectroscopic
Ellipsometer(SE) WavelengthRange 190to1700(or2300)nm 190to1700(or2300)nm 190nmto30µm MeasurableParameters FilmThickness 20Åto250µm 20Åto50µm 10Åto10µm OpticalConstants N&K N&K N&K R/T/A Yes Yes   Geometry   Yes   DigitalImaging   Yes   MainFeatures LowCost,FastMeasurement,WideDynamicRange Downto5umSpotSizeonanyPatternedStructure ComplicatedLayerStack Options WavelengthExtension,MappingStage,Heating/CoolingStage UniqueOptions LargeSpotSetupforIn-LineMetrologyApplications Raman&FluorescenceAdd-onSet-upsandoptionalsmallerspotsize  

 

 
 

简介:
Spectroscopicellipsometry(SE)isapowerfultechniquetopreciselymeasurethinfilmthickness,determineopticalconstants,investigatesurfaceandinterfacephenomenonandmanyotherphysical,chemicalandopticalpropertiesofmaterials.AngstromSunTechnologiesIncdesignsandmanufactureshighqualityspectroscopicellipsometersystemswithvariousoptionsfordifferentapplications.Besidesellipsometersystemitself,theadvancedanalysissoftwareisessentialtoextractthedesiredinformationasabove-mentioned,suchasthickness,roughness,alloyconcentrationanddielectricconstants.TFProbe™3.0fromusofferspowerfulanalysisfunctionsforellipsometrysensitivitystudy,photometry/ellipsometrysimulationanddataregression.UniquebutconfigurablemodeallowsdifferentuserstoaccessdifferentlevelandsuitableforbothR&Dandproductionqualitycontrolpurpose.


Modelsarespecifiedbasedonwavelengthrangesfordifferentapplications.Thefollowinggraphshowsavailablemodelsfor standardconfigurations.Inaddition,Model500 simplycoversarangeofbothModel100and400.Customizedproducts areavailablewithwavelengthrangeextensionfurtherdowntoDUVorInfrared(IR)ranges.Normally:
   Model100coversawavelengthrangefromDUVtoNIRrangeupto1100nm.
   Model200coversDUVandVisiblerange.
   Model300coversVisiblerange,startingfrom370nmto850nm
   Model400coversNIRrangestartingfrom900nmtypically
   Model450coversVistoNIRrange,startingfrom370nmupto1700nmtypically
   Model500coversDUVtoNIRrange,upto2500nm
   Model600coversNIRtoIRrange(1.7umto17umor1.7umto30um)
 
Wavelengthrangecoveragedependsonseveralfactorssuchaslightsource,detectors,opticsusedinsystem,lightdeliverymethod(usingfibersornot).Becauseofthesefactors,alltoolscanbecustomizedbasedonspecificapplication.Forexample,NIRrangecanbecoveredupto1700nmor2200nmor2500nmetc.DUVrangecanbedownto190nm.
一。SE椭偏仪主要型号

==================================
ModelSE300BM,400-1100nm,nomapping,

ModelSE200BM,250-1100nm,nomapping

ModelSE450BM,400-1700nm,nomapping

ModelSE500BM,190-1700nm,nomapping

 

6"stagemapping,adds$20K.

8"stagemapping,adds$22K.

====================================

设备型号说明:

ExampleModel:SE200BA-M300
SE:SpectroscopicEllipsometer
200:Indicates
B:DetectingType
              A:Scanningmonochromatorwithsingleelementdetector
              B:ArrayTypedetectorwithspectrographorinterferometer
A:VariableIncidentAngleType
              A:AutomaticvariableanglewithprecisionGoniometerandcomputercontrolled
              M:Manuallyadjustableincidentangleat5degreeinterval
M:MappingStage
300:MaximummappingsamplesizeOptions:                                                                                                                    
  • WavelengthExtensiontoVUVorIRRange

  • StageSize

  • ProbingbeamSpotsize

  • Photometry

  • Heating/CoolingStage

  • MappingstageinX-YorRho-Theta

  • Applications:                                                                                                           
    · Semiconductorfabrication(PR,Oxide,Nitride..)
    · Liquidcrystaldisplay(ITO,PR,Cellgap…..)
    · Biologicalfilmsandmaterials
    · Opticalcoatings,TiO2,SiO2,Ta2O5…..
    · Semiconductorcompounds
    · FunctionalfilmsinMEMS/MOEMS
    · Amorphous,nanoandcrystallineSi
    · SolarCellIndustry
    · MedicaldevicefabricationBackgroundonEllipsometry:                                                                                  
    Therearemanytechniquesforcharacterizingmaterials,eachhavingitsownadvantagesanddisadvantagesandeachbeinguniquelyabletorevealmaterialpropertiesthatothertechniquescan'taccess.Spectroscopicellipsometry(SE)isanopticaltechniquethatisparticularlyflexibleinthatitcanbeusedtodeterminetheopticalandphysicalpropertiesofawidevarietyofthin-filmmaterials.ItsabilitytodothiswithoutcontactordamagetothematerialofinteresthasseenitbecomeroutinelyusedinR&Dlaboratoriesandwithinmanufacturingfacilitiesformonitoringthinfilmgrowthanddepositionprocesses.
    SEreliesonthedeterminationofthepolarizationstateofabeamofpolarizedlightreflectedfromthesampleundercharacterization.WhenperformingSEmeasurements,thepolarizationstateisdeterminedatmanydiscretewavelengthsoverabroadwavelengthrange.Thechangeinthepolarizationstatecanbetracedtothephysicalpropertiesofthethinfilmbymeansofamodel.Characteristicssuchaslayerthickness,surfaceroughness,refractiveindex(n)andextinctioncoefficient(k)ofthematerialscanbedeterminedwithexcellentprecisionthroughregressionanalysis.
    TheinstrumentdeterminestwoellipsometryanglesΨandΔ,whichdescribethechangeinthepolarizationstateofthebeamuponreflectionfromthesample.Theratiooftheamplitudeofthepolarizationwithintheplaneofincidence(P)totheamplitudeofthepolarizationperpendiculartotheplaneofincidence(S)isrepresentedbyΨ.ThephaseretardationbetweenthetwopolarizationvectorsPandSisrepresentedbyΔ.ChangesinΔandΨessentiallydependupontheopticalconstants,nandk,ofthelayermaterialsandsubstrate,physicalthicknessoftheindividuallayersandsurfaceroughness.Aregressionanalysisallowsthedeterminationoftheseparameters.
    SEdataforΔandΨareobtainedatanumberofincidentanglesinaplanenormaltothesamplesurfaceandtypicallyat100-200differentwavelengthsforeachangle.SEinstrumentsuseawhitelightsourceandindividualwavelengthsareselectedfordetectionbyeitheramotordrivenmonochromator,oramulti-channeldetectorthatcandetectmanywavelengthssimultaneously.Increasingthenumberofanglesandwavelengthsatwhichdataareacquiredimprovesanalysisprecision,especiallyforcomplicatedepitaxialstructures. Note:
    1.SystemconfigurationandSpecificationssubjecttochangewithoutnotice
    2.*Filmproperty,surfacequalityandlayerstackdependent
    3.Customizedsystemavailableforspecialapplications
    4.TFProbeisregisteredtrademarkofAngstromSunTechnologiesInc.

     

    二.Microspectrophotometer(微光斑薄膜测试仪)

    MSP100MicrospectrophotometerandFilmThicknessMeasurementSystem
  • Features

  • SystemConfigurations

  • Specifications

  • Options

  • Applications                                                        

  • ApplicationExamples

  • Features:· EasytooperatewithWindowbasedsoftware
    · AdvancedDUVopticsandruggeddesignforhighestuptimeandthebestsystemperformance
    · Arraybaseddetectorsystemtoensurefastmeasurement
    · Affordable,portableandsmallfootprinttabletopdesign
    · MeasurefilmthicknessandRefractiveIndexupto5layersovermicronsizeregion
    · Allowtoacquirereflection,transmissionandabsorptionspectrainmilliseconds 
    · Capabletobeusedforrealtimespectra,thickness,refractiveindexmonitoring
    · Systemcomeswithcomprehensiveopticalconstantsdatabaseandlibrary
    · AdvancedSoftwareallowsusertouseeitherNKtable,dispersionorcompositemodel(EMA)foreachindividualfilm
    · IntegratedVision,spectrum,simulation,filmthicknessmeasurementsystem
    · Applytomanydifferenttypeofsubstrateswithdifferentthicknessupto200mmsize
    · Deepultravioletlightallowstomeasurefilmthicknessdownto20Å
    · 2Dand3Doutputgraphicsanduserfriendlydatamanagementinterface
    · AdvancedImagingsoftwarefordimensionmeasurementsuchasangle,distance,area,particlecountingandmore
    · VariousoptionsavailabletomeetspecialapplicationsSystemConfiguration:· Model:MSP100RTM
    · Detector:CCDArraywith2048 pixels
    · LightSource:HighpowerDUV-Visible
    · AutomaticStage:BlackAnodizedAluminumAlloywith5”x3”nettraveldistanceand1µmresolution,programcontrolled
    · MotorizedZfocusdriveandX-Y-Zjoystick
    · LongWorkingDistanceObjectives:4x,10x,15x(DUV),50x
    · Communication:USB
    · MeasurementType:Reflection/Transmissionspectra,Filmthickness/refractiveindexandfeaturedimensions
    · Computer: IntelCore2DuoProcessorwith200GBHarddriveandDVD+RWBurnerplus19”LCDMonitor
    · Power:110–240VAC/50-60Hz,3A
    · Dimension:16’x16’x18’(Tabletopsetup)
    · Weight:120lbstotal
    · Warranty:OneyearlaborandpartsSpecifications:                         · Wavelengthrange:250to1000nm
    · WavelengthResolution:1nm
    · SpotSize:100µm(4x),40µm(10x),30µm(15x),8µm(50x)
    · SubstrateSize:upto20mmthick
    · Measurablethicknessrange*:20Åto25µm
    · MeasurementTime:2msminimum
    · Accuracy*:betterthan0.5%(comparingwithellipsometryresultsforThermalOxidesamplebyusingthesameopticalconstants)
    &middot; Repeatability*:<2&#506;(1sigmafrom50thicknessreadingsfor1500&#506;ThermalSiO2onSiWafer)Options:                                                                                                                     Top&middot; WavelengthextensiontotoFurtherDUVorNIRrange
    &middot; HigherpowerDUVopticsforsmallerspotsize
    &middot; Customizedconfigurationforspecialapplications
    &middot; HeatingandCoolingStagefordynamicstudy
    &middot; Optionalstagesizeholdingsamplesupto300mm
    &middot; Higherwavelengthrangeresolutiondownto0.1nm
    &middot; Variousfiltersforspecialapplications
    &middot; Add-onaccessoriesforfluorescencemeasurement
    &middot; Add-onaccessoriesforRamanapplications
    &middot; Add-onaccessoriesforpolarizingapplicationsApplications:                                                                                                             Top&middot; Semiconductorfabrication(PR,Oxide,Nitride..)
    &middot; Liquidcrystaldisplay(ITO,PR,Cellgap&hellip;..)
    &middot; Forensics,Biologicalfilmsandmaterials
    &middot; Inks,Mineralogy,Pigments,Toners
    &middot; Pharmaceuticals,MedialDevices
    &middot; Opticalcoatings,TiO2,SiO2,Ta2O5&hellip;..
    &middot; Semiconductorcompounds
    &middot; FunctionalfilmsinMEMS/MOEMS
    &middot; Amorphous,nanoandcrystallineSiApplicationExamples:                                                                                             Top1.MeasuredTransmissionSpectrafromThreeFilters

    2.MeasuredFilmThickness

    3.MeasuredReflectionSpectrumoveraMEMSMirror

    4.MappedThicknessUniformityover4"wafer
    Note:1.SystemconfigurationandSpecificationssubjecttochangewithoutnotice
    2.*Filmproperty,surfacequalityandlayerstackdependent
    3.Customizedsystemavailableforspecialapplications
    4.TFProbeisregisteredtrademarkofAngstromSunTechnologiesInc.

     
    三.SR薄膜反射仪

    SRM300FilmThicknessMappingSystem
  • Features

  • SystemConfigurations

  • Specifications

  • Options

  • Applications                                                        

  • ApplicationExamples

  • MoreInformation

  • Features:

    FilmThicknessMeasurement-SRM300FilmThicknessGauge

    WhenyouneedanaccuratethinfilmthicknessmeasurementourSRM300allowsyoutomapfilmthicknessandrefractiveindexupto5layersthick.NoneedtoworryaboutcomplicatedequipmentsincetheSRM300iseasytosetupandoperate.ItusesWindowsbasedsoftware,somostpeoplearealreadyfamiliarwiththelookandfeeloftheoperatingsystem.Thisfilmthicknessgaugecanhandlevarioustypesofgeometrysubstrateupto300mmindiameterandvarioustypesofmappingpatternssuchaslinear,polar,squareorevenarbitrarycoordinates.Thearraybaseddetectorsystemensuresthefastestfilmthicknessmeasurement.Withitsadvancedopticsandruggeddesignyoucanalwaysbesuretogetthebestsystemperformance.
    &middot; EasytosetupandoperatewithWindowbasedsoftware
    &middot; Varioustypesofgeometrysubstrateupto300mmindiameter
    &middot; Varioustypesofmappingpatternsuchaslinear,polar,squareorarbitrarycoordinates
    &middot; Advancedopticsandruggeddesignforbestsystemperformance
    &middot; Arraybaseddetectorsystemtoensurefastmeasurement
    &middot; MapfilmthicknessandRefractiveIndexupto5layers
    &middot; Systemcomeswithcomprehensiveopticalconstantsdatabaseandlibrary
    &middot; Includecommonlyusedrecipes
    &middot; AdvancedTFProbeSoftwareallowsusertouseeitherNKtable,dispersionoreffectivemediaapproximation(EMA)foreachindividualfilm.
    &middot; UpgradeabletoMSP(Microspectrophotometer)mappingsystemwithpatternrecognition,orLargeSpotformappingoverpatternedorfeaturedstructure(withZonerageModel)
    &middot; Applytomanydifferenttypeofsubstrateswithdifferentthickness
    &middot; 2Dand3DoutputgraphicsanduserfriendlydatamanagementinterfacewithstatisticalresultsSystemConfiguration:&middot; Model:SRM300-300
    &middot; Detector:CCDArraywith2048 pixels
    &middot; LightSource:DCregulatedTungsten-Halogen
    &middot; LightDelivery:Optics
    &middot; Stage1:BlackAnodizedAluminumAlloyVacuumchuckholds200mmwafer
    &middot; Communication:USB&RS232
    &middot; Software:TFProbe2.2M
    &middot; MeasurementType:Filmthickness,reflectionspectrum,refractiveindex
    &middot; Computer:IntelCore2DuoProcessorwith200GBHarddriveandDVD+RWBurnerplus19&rdquo;LCDMonitor
    &middot; Power:110&ndash;240VAC/50-60Hz,3A
    &middot; Dimension:14&rdquo;(W)x20&rdquo;(D)x14&rdquo;(H)
    &middot; Weight:100lbs
    &middot; Warranty:OneyearlaborandpartsSpecifications:
  • Wavelengthrange:400to1050nm

  • SpotSize:500&micro;mto5mm

  • SampleSize:300mmindiameter

  • SubstrateSize:upto50mmthick

  • NumberofLayers*:Upto5films

  • Measurablethicknessrange*:50nmto50&micro;m

  • MeasurementTime:2ms-1s/sitetypical

  • PositionalRepeatability:~1&micro;m

  • Accuracy*:betterthan0.5%(comparingwithellipsometryresultsforThermalOxidesamplebyusingthesameopticalconstants)

  • Repeatability*:<2&#506;(1sigmafrom50thicknessreadings atcenterfor1500&#506;ThermalSiO2onSiWafer)

  • Options:                                                                                                                    Top
  • AdditionalModelswithWavelengthExtensiontoDUVorNIRRange:SRM100:250nm-1000nm

  • SRM400:900nm-1700nm

  • SRM500:400nm-1700nm

  • OtherSampleSize:200mmwafer(SRM300-200)

  • Customizedsize:Available

  • LargeSpotAccessoriesforfeaturedstructuremeasurement

  • Smallspotaccessoriesforhighlynonuniformsamples

  • Applications:                          
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